ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,042, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG ... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,043, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Reactive-ion deposition processes for dielectric mat... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,044, issued on July 14, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo). "Method of manufacturing semiconductor device, method of processing... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,045, issued on July 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Deposition of oxide thin films" was invented by Suvi P.... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,046, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Doped silicon oxide for bottom-up deposition" was in... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,047, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Atmospheric pressure plasma for substrate annealing"... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,048, issued on July 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing method and substrate processing apparatus" was i... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,049, issued on July 14, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "Semiconductor device and manufacturing method of semicon... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,050, issued on July 14, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods and apparatus for processing a substrate" wa... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,051, issued on July 14, was assigned to Resonac Corp. (Tokyo). "Etching gas, etching method, and method for producing semiconductor device"... Read More